G4MicroElecInelastic.cc

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//
// G4MicroElecInelastic.cc, 2011/08/29 A.Valentin, M. Raine
//
// Based on the following publications
//
//          - Inelastic cross-sections of low energy electrons in silicon
//      for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
//      NSS Conf. Record 2010, pp. 80-85.
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for electrons in Si,
//      NIM B, vol. 288, pp. 66 - 73, 2012.
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for protons and
//      heavy ions in Si, NIM B, vol. 287, pp. 124 - 129, 2012.
//
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#include "G4MicroElecInelastic.hh"
#include "G4DummyModel.hh"
#include "G4SystemOfUnits.hh"

#include "G4GenericIon.hh"

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using namespace std;

G4MicroElecInelastic::G4MicroElecInelastic(const G4String& processName,
                                           G4ProcessType type):G4VEmProcess (processName, type),
isInitialised(false)
{
  SetProcessSubType(53);
}

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G4MicroElecInelastic::~G4MicroElecInelastic()
{}

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G4bool G4MicroElecInelastic::IsApplicable(const G4ParticleDefinition& p)
{
  return (&p == G4Electron::Electron() ||
          &p == G4Proton::Proton()  ||
          &p == G4GenericIon::GenericIonDefinition());
}

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void G4MicroElecInelastic::InitialiseProcess(const G4ParticleDefinition* p)
{
  if(!isInitialised) 
  {
    isInitialised = true;
    SetBuildTableFlag(false);
    G4String name = p->GetParticleName();

    if(!EmModel(1)) SetEmModel(new G4DummyModel(), 1);
    AddEmModel(2, EmModel(1));   
  } 
}

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void G4MicroElecInelastic::PrintInfo()
{
  // V.I. printout of models is performed by model manager
  //      if this extra printout is needed it should be 
  //      protected by verbosity level
}         

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