Geant4  10.01
G4MicroElecSiStructure.cc
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27 // G4MicroElecSiStructure.cc, 2011/08/29 A.Valentin, M. Raine
28 //
29 // Based on the following publications
30 //
31 // - Inelastic cross-sections of low energy electrons in silicon
32 // for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
33 // NSS Conf. Record 2010, pp. 80-85.
34 // - Geant4 physics processes for microdosimetry simulation:
35 // very low energy electromagnetic models for electrons in Si,
36 // NIM B, vol. 288, pp. 66 - 73, 2012.
37 // - Geant4 physics processes for microdosimetry simulation:
38 // very low energy electromagnetic models for protons and
39 // heavy ions in Si, NIM B, vol. 287, pp. 124 - 129, 2012.
40 //
41 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
42 
44 #include "G4SystemOfUnits.hh"
45 
47 {
48  energyConstant.push_back(16.65*eV);
49  energyConstant.push_back(6.52*eV);
50  energyConstant.push_back(13.63*eV);
51  energyConstant.push_back(107.98*eV);
52  energyConstant.push_back(151.55*eV);
53  energyConstant.push_back(1828.5*eV);
54 
55  nLevels = energyConstant.size();
56 }
57 
58 
60 { }
61 
62 
64 {
65  G4double energ = 0.;
66 
67  if (level >=0 && level < nLevels) energ = energyConstant[level];
68 
69  return energ;
70 }
int G4int
Definition: G4Types.hh:78
G4double Energy(G4int level)
std::vector< G4double > energyConstant
static const double eV
Definition: G4SIunits.hh:194
double G4double
Definition: G4Types.hh:76