G4AdjointPhotoElectricModel.hh

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// $Id: G4AdjointPhotoElectricModel.hh 66892 2013-01-17 10:57:59Z gunter $
//
//      Module:         G4AdjointPhotoElectricModel
//      Author:         L. Desorgher
//      Organisation:   SpaceIT GmbH
//      Contract:       ESA contract 21435/08/NL/AT
//      Customer:       ESA/ESTEC
//
// CHANGE HISTORY
// --------------
//      ChangeHistory: 
//              -1 September 2007 creation by L. Desorgher  
//              
//              -January 2009. L. Desorgher     
//               Put a higher limit on the CS to avoid a high rate of  Inverse Photo e- effect at low energy. The very high adjoint CS of the reverse 
//               photo electric reaction produce a high rate of reverse photo electric reaction in the inner side of a shielding for eaxmple, the correction of this occurence
//               by weight correction in the StepDoIt method is not statistically sufficient at small energy. The problem is partially solved by setting an higher CS limit 
//               and compensating it by an extra weight correction factor. However when  coupling it with other reverse  processes the reverse photo-electric is still 
//               the source of very occasional high weight that decrease the efficiency of the computation. A way to solve this problemn is still needed but is difficult
//               to find as it happens in rarea case but does give a weighrt that is outside the noemal distribution. (Very Tricky!)  
//              
//              -October 2009   Correction of Element sampling. L. Desorgher            
//
//-------------------------------------------------------------
//      Documentation:
//              Model for the adjoint photo electric process
//
#ifndef G4AdjointPhotoElectricModel_h
#define G4AdjointPhotoElectricModel_h 1


#include "globals.hh"
#include "G4VEmAdjointModel.hh"
#include "G4PEEffectFluoModel.hh"
class G4AdjointPhotoElectricModel: public G4VEmAdjointModel

{
public:

  G4AdjointPhotoElectricModel();
  ~G4AdjointPhotoElectricModel();
  
  
  
  virtual void SampleSecondaries(const G4Track& aTrack,
                                G4bool IsScatProjToProjCase,
                                G4ParticleChange* fParticleChange);
  virtual G4double AdjointCrossSection(const G4MaterialCutsCouple* aCouple,
                                G4double primEnergy,
                                G4bool IsScatProjToProjCase);
  virtual G4double GetAdjointCrossSection(const G4MaterialCutsCouple* aCouple,
                                G4double primEnergy,
                                G4bool IsScatProjToProjCase);
                                
  G4double AdjointCrossSectionPerAtom(const G4Element*  anElement,G4double electronEnergy);
  
  
  
  inline void SetTheDirectPEEffectModel(G4PEEffectFluoModel* aModel){theDirectPEEffectModel = aModel; 
                                                       DefineDirectEMModel(aModel);}                                  
  
  virtual void CorrectPostStepWeight(G4ParticleChange* fParticleChange, 
                                     G4double old_weight, 
                                     G4double adjointPrimKinEnergy, 
                                     G4double projectileKinEnergy,
                                     G4bool IsScatProjToProjCase);
  
  
private:
  G4double  xsec[40];
  G4double  totAdjointCS;
  G4double  totBiasedAdjointCS;
  G4double  factorCSBiasing;
  G4double  pre_step_AdjointCS;
  G4double  post_step_AdjointCS;
  
  
  G4double  shell_prob[40][40];
 
  
  G4PEEffectFluoModel* theDirectPEEffectModel;
  size_t index_element;
  G4double current_eEnergy;
  
  
private:  
  void DefineCurrentMaterialAndElectronEnergy(const G4MaterialCutsCouple* aCouple,
                                G4double eEnergy);
    
};

#endif