Geant4  10.01.p03
G4MicroElecSiStructure.hh
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27 // G4MicroElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
28 //
29 // Based on the following publications
30 //
31 // - Inelastic cross-sections of low energy electrons in silicon
32 // for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
33 // NSS Conf. Record 2010, pp. 80-85
34 // - Geant4 physics processes for microdosimetry simulation:
35 // very low energy electromagnetic models for electrons in Si,
36 // NIM B, vol. 288, pp. 66-73, 2012.
37 // - Geant4 physics processes for microdosimetry simulation:
38 // very low energy electromagnetic models for protons and
39 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
40 //
41 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
42 
43 
44 #ifndef G4MICROELECSISTRUCTURE_HH
45 #define G4MICROELECSISTRUCTURE_HH 1
46 
47 #include "globals.hh"
48 #include <vector>
49 
50 
52 {
53 public:
54 
56 
57  virtual ~G4MicroElecSiStructure();
58 
59  G4double Energy(G4int level);
60 
62 
63 
64 private:
65 
66  // Number of levels of silicon
68 
69  std::vector<G4double> energyConstant;
70 
71 };
72 
73 #endif
int G4int
Definition: G4Types.hh:78
G4double Energy(G4int level)
std::vector< G4double > energyConstant
double G4double
Definition: G4Types.hh:76